| 摘要 |
PROBLEM TO BE SOLVED: To obtain a Gaussian beam of high reliability and high quality from low power to high power, in a semiconductor laser device composed of GaN based material. SOLUTION: An N-GaN contact layer 15, an N-Ga1-z1Alz1N/GaN super lattice clad layer 16, an N-Ga1-y2Aly2N optical waveguide layer 17, an Inx2Ga1-x2N/Inx1 Ga1-x1N multiple quantum well active layer 18, a P-Ga1-y3Aly3N carrier blocking layer 19, a P-Ga1-y2Aly2N optical waveguide layer 20, a P-Ga1-z1Alz1N/GaN super lattice clad layer 21 and a P-GaN contact layer 22 are grown in this order on a GaN film 14. Etching is performed as far as the super lattice clad layer 21, and a ridge part is formed. The contact layer 22 of a region (L) of an end surface of the ridge part is eliminated, an insulating film 26 is formed, and the vicinity of the end surface is made a part in which a current is not injected.
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