| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a magnetic memory device in which complex constitution of a sense amplifier is avoided and which can perform high speed read-out. SOLUTION: This device is provided with two TMR elements 4a, a memory cell 52 consisting of two NMOS transistors 5a and 5b, word liens connected to gates of the NMOS transistors 5a, 5b, bit lines connected to the TMR element 4a through the NMOS transistor 5a, inversion bit lines connected to the TMR element 4b through the NMOS transistor 5b, and a sense amplifier 53 connected to the bit lines and the inversion bit lines. When reading out data, a signal is inputted to a selected word line, and potential difference between the bit line and the inversion bit line generated by a signal inputted to a word line is detected by a sense amplifier 53.</p> |
