CURRENT TERMINATING CIRCUIT IN MRAM

摘要

A magnetic random access memory comprises wires (4,5), a plurality of wires (3), a plurality of memory cells (2) and terminating parts (14). The wires (4,5) extend in the Y direction, while the wires (3) extend in the X direction. The memory cells (2) are placed at intersections between the wires (4,5) and the wires (3). The terminating parts (14) each are placed between the memory cells (2) and connected to the wires (4,5). The memory cells (2) each include transistors (6,16) and a magnetic resistor element (7). The transistors (6,16) are connected in series between the wires (4,5) and controlled by a signal of the wire (3). The magnetic resistor element (7) is connected between the transistors (6,16). During a write operation, when a write current (Iw) is caused to flow from one of the wires (4,5) to the other thereof via the transistors (6,16), the terminating part (14) grounds the other of the wires (4,5).