FLASH MEMORY DEVICE WITH SPLIT STRING SELECTION LINE STRUCTURE

摘要

A flash memory device with a split string selection line structure is provided to improve program characteristics by reducing current consumption required for reading data. A memory cell array includes a plurality of strings. Each string has a string selection transistor, a ground selection transistor(GST) and memory cells connected between the string selection transistor and the ground selection transistor serially. A plurality of string selection lines correspond to sectors(100a-100d), and are connected to string selection transistors of the corresponding sectors independently. A string selection line corresponding to the selected sector is driven with a string selection line voltage of each operation mode, and a string line corresponding to the unselected sector is driven with a voltage lower than the string selection line voltage.