发明名称 PROM CIRCUIT FOR WRITING INTO FLASH MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a PROM(programmable read only memory) circuit for writing without using any SRAM(static random access memory) for writing into a flash memory or without frequent switching between a flash memory and a PROM. SOLUTION: This PROM circuit for writing into a flash memory using a PROM 3 for writing into a flash memory 2 in a microprocessor system using the flash memory as a program storing device, is equipped with the PROM accessible at two positions, that is, an address A6 accessed when power is turned on and switchable to a flash memory and an address B7 accessible at all times independently of the flash memory existing in a separate space, a switching means SW1 for allocating an area of an address A to the PROM or the flash memory when resetting, an access means capable of accessing two positions, the address A and an address B, on the PROM, and a writing means for switching from the PROM to the flash memory and writing PROM data in the address B into the flash memory.
申请公布号 JP2002157138(A) 申请公布日期 2002.05.31
申请号 JP20000352943 申请日期 2000.11.20
申请人 YASKAWA ELECTRIC CORP 发明人 ANZAI MASAYUKI
分类号 G06F12/06;G06F11/00;(IPC1-7):G06F11/00 主分类号 G06F12/06
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