POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
摘要
<p>A positive resist composition having a large exposure energy margin and excellent in resolution and dry etching resistance; and a method of forming a pattern from the positive resist composition. This resist composition comprises:a resin ingredient (A) which has acid-dissociable dissolution-inhibitive groups and comes to have enhanced alkali solubility by the action of an acid; and an acid generator ingredient (B) which generates an acid upon exposure to light. The resin ingredient (A) comprises: a structural unit (a1) represented by the following general formula (I); a structural unit (a2) represented by the general formula (I) wherein the hydroxy group has been protected by replacing the hydrogen atom thereof with an acid-dissociable dissolution-inhibitive group (II) represented by the following general formula (II); and a structural unit (a3) represented by the general formula (I) wherein the hydroxy group has been protected by replacing the hydrogen atom thereof with an acyclic acid-dissociable dissolution-inhibitive group (III).</p>
申请公布号
WO2005071490(A1)
申请公布日期
2005.08.04
申请号
WO2005JP00351
申请日期
2005.01.14
申请人
TOKYO OHKA KOGYO CO., LTD.;HOJO, TAKUMA;ISHIKAWA, KIYOSHI;ANDO, TOMOYUKI