发明名称 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
摘要 <p>A positive resist composition having a large exposure energy margin and excellent in resolution and dry etching resistance; and a method of forming a pattern from the positive resist composition. This resist composition comprises:a resin ingredient (A) which has acid-dissociable dissolution-inhibitive groups and comes to have enhanced alkali solubility by the action of an acid; and an acid generator ingredient (B) which generates an acid upon exposure to light. The resin ingredient (A) comprises: a structural unit (a1) represented by the following general formula (I); a structural unit (a2) represented by the general formula (I) wherein the hydroxy group has been protected by replacing the hydrogen atom thereof with an acid-dissociable dissolution-inhibitive group (II) represented by the following general formula (II); and a structural unit (a3) represented by the general formula (I) wherein the hydroxy group has been protected by replacing the hydrogen atom thereof with an acyclic acid-dissociable dissolution-inhibitive group (III).</p>
申请公布号 WO2005071490(A1) 申请公布日期 2005.08.04
申请号 WO2005JP00351 申请日期 2005.01.14
申请人 TOKYO OHKA KOGYO CO., LTD.;HOJO, TAKUMA;ISHIKAWA, KIYOSHI;ANDO, TOMOYUKI 发明人 HOJO, TAKUMA;ISHIKAWA, KIYOSHI;ANDO, TOMOYUKI
分类号 G03F7/039;G03F7/033;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/039
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