THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MAKING THIN FILM TRANSISTOR SUBSTRATE

摘要

A thin film transistor substrate and a method for manufacturing a thin film transistor substrate are provided to flatten an organic semiconductor layer of a thin film transistor substrate by forming a partition wall of a fluoric high polymer. A thin film transistor substrate(1) includes an insulation substrate(10). Source and drain electrodes(31,32) are formed on the insulation substrate, separately arranged on other sides of a channel area. A partition wall(41) covers the channel area, partially exposing the source and drain electrodes, and formed of a fluoric high polymer material. An organic semiconductor layer(51) is formed in the partition wall.