METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

In a method of manufacturing a semiconductor device, an insulating layer pattern defining at least one opening partially exposing a semiconductor substrate is formed on a semiconductor substrate including a single crystalline material. An amorphous thin layer is formed on the insulating layer pattern to fill up the opening. The amorphous thin layer is transformed into a single crystalline thin layer by providing the amorphous thin layer with a laser beam having sufficient energy to melt the amorphous thin layer. Here, the semiconductor substrate partially exposed through the opening is used as a seed. A gate pattern is formed on the single crystalline thin layer. Source/drain regions are formed at surface portions of the single crystalline thin layer adjacent to both sidewalls of the gate pattern.