DURABLE METAL FILM DEPOSITION FOR MASK REPAIR

摘要

A method and a tool for repairing a semiconductor mask are provided. The method comprises the steps of: disposing a semiconductor mask within a repair chamber including a repair tool; and supplying a first gas and a second gas to the repair chamber. The first gas includes a repair material for repairing a defect on the semiconductor mask. The second gas includes a polar gas, and helps deposition of the repair material on the semiconductor mask. The method further comprises: activating the tool to interact with the first and second gases to repair the semiconductor mask by depositing the repair material on a portion of the defect; and removing the semiconductor mask repaired from the repair chamber. The dimension of the deposited repair material is approximately less than 32 nanometers.