| 摘要 |
<p>PURPOSE: To enhance the reliability of the operation of a semiconductor component and to increase the allowable extent of a pressure, which can be applied to the component from the outside, by a method wherein a region which is brought into contact with an anode contact by pressure is arranged in opposition to a region which is brought into contact with a cathode contact by pressure. CONSTITUTION: A semiconductor wafer 2 having variously doped layers (an n-type emitter layer 2a, a p-type base layer 2b, an n-type base layer 2c and a p-type emitter layer 2d) has a flat surface on an anode side and the entire surface of the flat surface is covered with an anode metallization 4. The metallization 4 is formed this outside a region specified by a cathode finger 7. The metallization 4 is formed thick inside each segment, is formed with a plateau 11, which corresponds to a cathode metallization 6 arranged in opposition to the metallization 4 in points of the shape and extent of the metallization 6, and is arranged symmetrically to the latter. The metallization 4 having the plateau 11 locally can be similarly used to a component short-circuiting or not short-circuiting the anodes 10.</p> |
