发明名称 HALFGELEIDER-MICROGOLFINRICHTING MET VERBETERDE THERMI- SCHE EIGENSCHAPPEN.
摘要 A microwave semiconductor device with improved thermal properties is disclosed wherein multiple active semiconductor bodies are disposed between two electrically and thermally isolated heat sinks. Two separate thermal paths are provided for heat produced within the semiconductor material. The maximum operating power of devices such as double-drift IMPATT diodes is greatly extended.
申请公布号 NL7809334(A) 申请公布日期 1979.03.16
申请号 NL19780009334 申请日期 1978.09.13
申请人 RAYTHEON COMPANY TE LEXINGTON, MASSACHUSETTS, VER.ST.V.AM. 发明人
分类号 H01L23/36;H01L25/07;H01L29/864;(IPC1-7):01L23/34;01L25/02 主分类号 H01L23/36
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