发明名称 Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
摘要 A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer disposed on the non-single-crystal semiconductor layer. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5x1018 atoms/cm3 or less.
申请公布号 US5391893(A) 申请公布日期 1995.02.21
申请号 US19910694406 申请日期 1991.05.01
申请人 SEMICODUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI
分类号 H01L21/205;H01L31/028;H01L31/0288;H01L31/0376;H01L31/0392;H01L31/075;H01L31/105;H01L31/20;(IPC1-7):H01L29/78;H01L29/04 主分类号 H01L21/205
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