发明名称 |
Nonsingle crystal semiconductor and a semiconductor device using such semiconductor |
摘要 |
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer disposed on the non-single-crystal semiconductor layer. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5x1018 atoms/cm3 or less.
|
申请公布号 |
US5391893(A) |
申请公布日期 |
1995.02.21 |
申请号 |
US19910694406 |
申请日期 |
1991.05.01 |
申请人 |
SEMICODUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
分类号 |
H01L21/205;H01L31/028;H01L31/0288;H01L31/0376;H01L31/0392;H01L31/075;H01L31/105;H01L31/20;(IPC1-7):H01L29/78;H01L29/04 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|