| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacture by which the connecting area of the external connecting terminal of a bonding pad, etc., is densely arranged in and which is reliable in addition. SOLUTION: The electrodes 100, 200 and 300 of the layers are connected with each other by means of buried conductive layers 110a to 110d and 120a to 120d. A level difference is not generated even at the time of promoting multilayered structure. In addition, the electrode 200 of a second layer is provided with openings 130a to 130i to connect first and second interlayer insulating films 160 and 150 through this opening. Thereby a supporter 140 consisting of the interlayer insulating films is interposed between the electrode 100 of the third layer and the electrode 300 of the first layer. Consequently, a crack is never generated at the interlayer insulating films 150 and 160 even when a load is added at the time of wire bonding. |
