| 摘要 |
<p>There are provided a GaN-based light emitting diode (LED) capable of minimizing the structural defect of the GaN-based LED when a substrate is separated from the GaN-based LED and of maximizing light extraction efficiency and a method of fabricating the same. The method of fabricating the GaN-based LED may include forming a plurality of scattering inducing patterns separated from each other at uniform intervals on a substrate, growing a GaN-based semiconductor layer formed of a plurality of layers on an entire surface of the substrate including the scattering inducing patterns, removing the scattering inducing patterns to form scattering inducing grooves in the GaN-based semiconductor layer, and separating the substrate from the GaN-based semiconductor layer by a laser lift off (LLO) method in a state where the scattering inducing patterns are removed.</p> |
