| 摘要 |
1,160,058. Semi-conductor devices. MOTOROLA Inc. 9 April, 1968 [26 April, 1967], No. 17068/68. Heading H1K. A method of establishing local variations of carrier lifetime in a semi-conductor body 10 during manufacture comprises forming a metal impurity gettering region 14 in a part of the body adjacent that region of the body where the carrier lifetime is required to be long, and then diffusing a metal impurity into the body to shorten the carrier lifetimes in the body other than in that region influenced by the gettering region. The metal impurity diffused in the silicon body to create the gettering region is phosphorus, arsenic, antimony, boron, gallium or aluminium, the diffusion being carried out from a vapour stage through a window 13 in a silicon oxide coating 12. Both the doped silicon region 14 and the oxide layer 12 in combination at those parts where they have a common interface provide the gettering effect, although the doped silicon region 14 alone can provide the effect. The metal impurity diffused in the body to shorten the carrier lifetime is gold, copper, iron or nickel, the diffusion being carried out from a metal surface film deposited on the semi-conductor body. |
