发明名称 |
Gate circuit for gate turn-off thyristor |
摘要 |
A gate circuit for gate turn-off thyristors is disclosed which includes a turn-on circuit formed of a series combination of a turn-on power source and an NPN transistor and a turn-off circuit formed of a series combination of a turn-off power source and a thyristor, and in which a PNP transistor is provided between the anode and gate of the thyristor in such a manner that the base of the NPN transistor and the base of the PNP transistor are connected to each other and a junction of these bases receives a control signal for turning on or off a gate turn-off thyristor.
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申请公布号 |
US4456836(A) |
申请公布日期 |
1984.06.26 |
申请号 |
US19810335547 |
申请日期 |
1981.12.29 |
申请人 |
HITACHI, LTD. |
发明人 |
MATSUDA, YASUO;HONDA, KAZUO;FUKUI, HIROSHI;AMANO, HISAO;MUSHA, SHUJI |
分类号 |
H03K17/732;(IPC1-7):H03K17/72 |
主分类号 |
H03K17/732 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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