发明名称 Gate circuit for gate turn-off thyristor
摘要 A gate circuit for gate turn-off thyristors is disclosed which includes a turn-on circuit formed of a series combination of a turn-on power source and an NPN transistor and a turn-off circuit formed of a series combination of a turn-off power source and a thyristor, and in which a PNP transistor is provided between the anode and gate of the thyristor in such a manner that the base of the NPN transistor and the base of the PNP transistor are connected to each other and a junction of these bases receives a control signal for turning on or off a gate turn-off thyristor.
申请公布号 US4456836(A) 申请公布日期 1984.06.26
申请号 US19810335547 申请日期 1981.12.29
申请人 HITACHI, LTD. 发明人 MATSUDA, YASUO;HONDA, KAZUO;FUKUI, HIROSHI;AMANO, HISAO;MUSHA, SHUJI
分类号 H03K17/732;(IPC1-7):H03K17/72 主分类号 H03K17/732
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