| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing capable of stably forming a structure having an overlapping size of the gate of about 0.1μm or less. SOLUTION: The method for manufacturing a semiconductor device comprises a step of removing a prescribed part of an amorphous film by etching with a resist film 18 formed on the amorphous film 17 as a mask, a step of removing the prescribed part of a second n-type GaAs layer 16 by wet etching with the amorphous film as a mask by an etchant containing a tartaric acid and an H2O of a ratio of 100:1 to 5:1 with the finger direction of the gate 4 set parallel to a crystal orientation [011], a step of selectively removing only the second n-type GaAs layer 16 by an etchant having high selectivity and anisotropy, and a step of vapor-depositing the gate metal 4 around a removed part of a non-doped or an n-type GaAs layer 14 and a peripheral edge and lifting-off the resist layer 18.
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