| 摘要 |
PROBLEM TO BE SOLVED: To polish the polished surface of a substrate without making any mark on it by a method wherein slurry composed of medium and cerium oxide particles which is set smaller in maximum diameter than a specific value and dispersed into the medium is used as abrasive material. SOLUTION: Cerium oxide particles are dispersed into water by a homogenizer, an ultrasonic dispersing device, and a ball mill besides a usual agitator. It is preferable that a wet dispersing device such as a ball mill, a vibration ball mill, a planetary ball mill, a medium agitating mill or the like is used to disperse cerium oxide particles of micro particles smaller than 1μm in size. Slurry composed of water cerium oxide particles dispersed into formed on a semiconductor substrate where circuit elements and wiring patterns are formed, and the SiO2 insulating layer formed on the semiconductor substrate is polished with cerium oxide abrasive material, whereby the rough surface of the SiO2 insulating layer are turned smooth through all the surface of the substrate. |
