| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of tracking arc even if a target poor in oxygen is used, to enable stable film deporation and to obtain ITO(indium tin oxide) transparent electrically conductive coating improved in the controllability of specific resistance by the concn. of oxygen and lower in resistance in the production of ITO transparent electrically conductive coating using an RF sputtering method. SOLUTION: As for the method for producing ITO transparent electricallyl conductive film, a high frequency magnetron sputtering method in which a magnet is arranged at the back face of a target, high frequency electric power is fed to the target in an atmosphere in which, as a sputtering gas, a rare gas is introduced, plasma is converged on the vicinity of the target, and a sputtering phenomenon is utilized to form ITO transparent electrically conductive film on a substrate is used. In this case, as the target, a sintered body essentially consisting of oxide elements of In2 O3 and SnO2 and added with any of In, Sn and In-Sn alloy or the like is used, the feed of the high frequency electric power to the target is periodically stopped, and the time for feeding the high frequency electric power is made shorter than that required for generation of abnormal discharge. |
