Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

摘要

A high quality thin film is formed by forming a layer in which remaining residues are suppressed for each cycle. When a substrate sequentially passes through a first processing region, a second processing region, and a third processing region by rotating a substrate placement unit, a first layer is formed on the substrate while the substrate passes through the first processing region, a second layer is formed by reacting plasma of a reactive gas with the first layer while the substrate passes through the second processing region, and the second layer is modified by plasma of a modifying gas while the substrate passes through the third processing region.

主权项

1. A substrate processing apparatus comprising:
a process chamber including a first processing region, a second processing region and a third processing region, and configured to process a substrate in the first processing region, the second processing region and the third processing region; a rotation unit configured to rotate a substrate placement unit supporting the substrate; a process gas supply system configured to supply a source gas containing a first element and a halogen element, a reactive gas containing a second element and a modifying gas free of the second element to the first processing region, the second processing region and the third processing region, respectively; a reactive gas plasma generating unit configured to generate plasma of the reactive gas in the second processing region; a modifying gas plasma generating unit configured to generate plasma of the modifying gas in the third processing region; and a control unit configured to control the rotation unit, the process gas supply system, the reactive gas plasma generating unit and the modifying gas plasma generating unit to pass the substrate through the first processing region, the second processing region and the third processing region in sequence by rotating the substrate placement unit, to form a first layer containing the first element on the substrate while the substrate passes through the first processing region and a second layer containing the first element and the second element by reacting the first layer with the plasma of the reactive gas and desorbing the halogen element remaining in the first layer while the substrate passes through the second processing region, and to modify the second layer by reacting the second layer with the plasma of the modifying gas and desorbing the halogen element remaining in the second layer while the substrate passes through the third processing region.