| 摘要 |
PROBLEM TO BE SOLVED: To provide an InGaAlP semiconductor light-emitting element, and its manufacturing method, wherein initial degradation of the optical output residual rate is very small. SOLUTION: Relating to a semiconductor light-emitting element wherein a light-emitting layer 17, clad layers 16 and 18 which lattice-conform to gallium arsenic and a current diffusion layer 21 where a lattice-unconformity occurs to a gallium arsenic and provided on a gallium arsenic substrate 11, a latice- unconformity buffering layer 20 is provided, which buffers a lattice-unconformity between such layer as lattice-unconforms to the gallium arsenic and such layer as generates lattice-unconformity to the gallium arsenic, between the clad layer 18 and the current diffusion layer 21 formed on the light-emitting layer 17. Further, the semiconductor light-emitting element manufacturing method comprises a process for forming the lattice-unconformity buffering layer 20, relating to the semiconductor light-emitting element. |
