| 摘要 |
The technology relates to a semiconductor device including a dual work function gate structure to improve gate induction drain leakage current and current driving performance, and a manufacturing method thereof. The semiconductor device according to the technology comprises: a body including a first bonding area; a pillar which is located on the body and includes a vertical channel area and a second bonding area on the vertical channel area; a gate trench to expose the sides of the pillar; a gate insulation layer for covering the gate trench; and a gate electrode which is embedded inside the gate trench while interposing the gate insulation layer. The gate electrode can comprise: a first work function liner including a metal material overlapped on the vertical channel area; a second work function liner which is overlapped on the second bonding area and includes a non-metal material; and an air gap located between the second work function liner and the second bonding area. |
