| 摘要 |
PURPOSE:To realize excellent glass passivation without degrading a baking atmosphere in glass baking after burying glass by using an insulating film satisfying specific conditions for sections except a groove section so that glass does not adhere on the sections except the groove section on the burying of glass. CONSTITUTION:The insulating film of which 1.it can be etched-it is particularly preferable that it can be plasma-etched, 2.its etching rate is larger than glass and 3.it does not degrade the baking atmosphere by combustion, etc. on the baking of glass as shown in (B) such as a plasma CVD silicon nitride film 8 is formed on the surface of the P<+> layer 1 of a semiconductor substrate 10A with the P<+> layer 1, an N layer 2 and an N<+> layer 3. The groove 5 is thereafter formed through machining and is filled with glass powder 6 through an electrophoresis method while using said insulating film 8 as a mask, and a junction surface is coated completely with glass 7 through glass baking. Said insulating film 8 used as the mask is removed through plasma etching, structure shown in (F) is obtained, and processes are transferred to an electrode forming process. |
