| 摘要 |
PURPOSE:To make a circuit highly speedy and to integrate the circuit by a method wherein, at a multiplexer circuit, a MOS transistor having a comb- shaped gate is combined with another MOS transistor having a straight-type gate. CONSTITUTION:A polycrystalline silicon film 8 is deposited; then, a silicon oxide film acting as a gate insulating film and a polycrystalline silicon film 5 acting as a gate electrode are deposited in succession; the polycrystalline silicon film and the silicon oxide film other than a gate part are removed. Thin ions of P are implanted and an ohmic layer (n layer) is formed; a passivating film such as the silicon oxide film or the line is formed on the layer; a source-drain contact hole 7 is made by a photolithographic process; Al is evaporated; the Al other than a source part 9 and a drain part 6 is removed. By this method, because in electric charge is stored at a load capacitor C through a comb-shaped TFT, a high-speed circuit can be expected; because this circuit is charged through a straight-type TFT, the high-speed circuit can be expected without occupying a big area. |
