| 摘要 |
FIELD: automation and computer engineering, in particular, magnetic thin-film memory registers and gates. SUBSTANCE: device has silicon substrate which carries first insulating layer, sharp-tipped strip which has two protection layers, which are separated by magnetoresistive layers and thin-film copper layer. Other layers over strip include second insulation layer, conducting layer with feedback circuit and third insulation layer. EFFECT: possibility to design logical gates using spin-gate magnetoresistive structures for operation in heavy conditions. 2 cl, 3 dwg.
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