| 摘要 |
A vapor deposition device for fabricating a compound semiconductor has many organometallic gas supply systems, each of which for synthesizing and supplying more than one organometallic gas, a first group of valves connected to the organometallic gas supply systems, and the first group of valves for selecting a specific system from among the organometallic gas supply systems by opening and closing the relevant valve group, an organometallic gas supply line connected to the first valve group, a second group of valves connected to the first group of valves for selecting the next organometallic gas supply system to be used among the organometallic gas supply systems by opening and closing the relevant valve group, a vent line connected to the second valve group, a reaction furnace connected to the organometallic gas supply means for continuously propagating different types of thin-films by means of organometallic gases supplied from the organometallic gas supply line, a microcomputer system for controlling the operation of the first group of valves and the second group of valves.
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