| 摘要 |
PURPOSE: A method for manufacturing a cylindrical capacitor of a semiconductor device is provided to manufacture the low cost semiconductor device by reducing the manufacturing processes and to improve the capacitance of the capacitor by increasing an effective area of a capacitor electrode. CONSTITUTION: The first insulation film, the first etching barrier film, the second insulation film and the second etching barrier film are successively formed on a semiconductor substrate(600). A silicon oxide film pattern, the second etching barrier film pattern(650a), the second insulation film pattern(640a) and the first etching barrier film(630a) having a storage node hole exposing a part of the first insulation film are formed by etching the second etching barrier film, the second insulation film and the first etching barrier film. The third insulation film is formed after removing the photoresist pattern. A spacer(660a) is formed on an inner wall of the storage node hole by etching back the third insulation film. The first insulation pattern(620a) having the node contact hole is formed by etching the first insulation film through the second etching barrier film pattern and the spacer as a mask.
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