发明名称 PLASMA TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which allows formation of a film of an even thickness with no change in film thickness near the edge of a substrate in a transportation direction when forming the film by passing the substrate through an area between electrodes wherein a plasma is generated. <P>SOLUTION: The plasma treatment apparatus forms a film on a substrate using a plasma generated by applying an electric field between a pair of opposed electrodes (9 and 10) under a pressure near the atmospheric one. The plasma treatment apparatus has such a structure as to allow the substrate to be passed between the electrodes, and one of the electrodes is divided into a plurality of portions, and a capacitor (13) is connected between each portion of the divided electrode (9) and a power supply (12). <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004363321(A) 申请公布日期 2004.12.24
申请号 JP20030159902 申请日期 2003.06.04
申请人 SEKISUI CHEM CO LTD 发明人 NAKAJIMA SETSUO;TAKAHASHI HIDENORI
分类号 H05H1/24;B01J19/08;C23C16/509;H01L21/205;H01L21/31 主分类号 H05H1/24
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