发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the number of manufacturing processes, and to reduce manufacturing cost of a memory unit by a method wherein a gate on a channel region at an EP-ROM region is also made to have a one layer construction. CONSTITUTION:An insulating film provided on a floating gate 27 up to this time is made as an insulating film 28 forming in line laterally with a channel region 5 interposing an element isolation region 22a between them, a control gate 29 is provided under the insulating film 28, the floating gate 27 is provided communicating on an insulating film 6 and the insulating film 28 crossing the element isolation region 22a, and an EP-ROM of a one layer construction is formed. The gate on the channel region of the EP-ROM can be made to have the one layer construction according to this constitution, and a one chip microcomputer assembled with the EP-ROM can be formed at low cost, for example.
申请公布号 JPS60260147(A) 申请公布日期 1985.12.23
申请号 JP19840116015 申请日期 1984.06.06
申请人 FUJITSU KK 发明人 SUGAYA SHINJI
分类号 H01L27/112;H01L21/8246;H01L21/8247;H01L27/10;H01L29/788;H01L29/792 主分类号 H01L27/112
代理机构 代理人
主权项
地址
您可能感兴趣的专利