METHOD AND DEVICE FOR ASHING

摘要

PURPOSE:To completely remove any inorganic impurity contained in resist by a method wherein resist is irradiated with ultraviolet ray to remove a resist film and then the inorganic matter contained in the resist are removed by wet processing to lessen the damage to an element. CONSTITUTION:A wafer 7 not yet processed is contained in a wafer cassette 1. The wafer 7 is placed by a carrier on a stage 6 serving also as a heater in a chamber 3. The wafer 7 is supplied with oxygen gas containing ozone from a nozzle 4 and then irradiated with ultraviolet rays in beam wavelength of 185nm and 254nm, etc. The wafer 7 wherefrom resist is removed in the chamber 3 is contained in another wafer cassette 9 by another carrier 8. The cassette 9 is immersed in a vessel 11 by the other carrier 11 to remove any inorganic impurities and residual resist by ozone and liquid chemicals 12 such as sulfuric acid. Through these procedures, the inorganic impurities contained in resist can be completely removed.