| 摘要 |
PURPOSE:To obtains an ohmic connection for an n-type semiconductor boron nitride by forming a metal which consists of at least one element out of B, Al, Ga, and In on an n-type semiconductor cubic boron nitride as an electrode. CONSTITUTION:A metal which consists of at least one element out of B, Al, Ga, and In is formed on an n-type semiconductor cubic boron nitride as an electrode. In this case, an electrode constituting element and boron as well as nitrogen are activated due to heating of a substrate when forming an electrode, radiant heat when performing deposition of electrode, or annealing after forming the electrode, an element such as Al, Ga, and In which leads to mutual diffusion on the electrode/semiconductor interface easily forms a nitride, nitrogen is diffused into B even if the electrode consists of B, and A easily forms a boride. Thus, mutual diffusion of the electrode constituting element and boron as well as nitrogen is further accelerated, thus obtaining an ohmic electrode. |
