发明名称 MANUFACTURE OF THIN FILM LIGHT EMITTING DIODE
摘要 PURPOSE:To avoid the mutual diffusion of component elements between laminated layer films in the crystallization process of super-lattice produced layer by crystallizing the quantum well layer and the part near the pole piece thereof by using light. CONSTITUTION:Specific part of a light emitting layer is irradiated with visible rays having photon energy not exceeding the level corresponding to the optical forbidden band width of a quantum well barrier layer but exceeding that of the quantum well layer to be crystallized. Thus, most of the visible rays irradiated on the light emitting layer are absorbed into the quantum well layer but not to be absorbed into the quantum well barrier layer to be transmitted. At this time, a part of photons absorbed into the quantum well layer contributing to the non-radiation transient process of the component atoms generate heat so as to crystallize the quantum well layer by using the generated heat when a lot of photons are incident. Furthermore, the super lattice structure does not reach the thermal equilibrium state causing the thermal diffusion after the local heat generation so that the mutual component elements of the quantum well layer and the quantum well barrier layer may not be diffused at all.
申请公布号 JPH0799341(A) 申请公布日期 1995.04.11
申请号 JP19930242303 申请日期 1993.09.29
申请人 TOPPAN PRINTING CO LTD 发明人 KOBAYASHI SATORU
分类号 H01L33/06;H01L33/34;H01L33/42 主分类号 H01L33/06
代理机构 代理人
主权项
地址