发明名称 A SILICON CAPACITIVE PRESSURE SENSOR HAVING A GLASS DIELECTRIC DEPOSITED USING ION MILLING
摘要 <p>A silicon capacitive pressure sensor is disclosed having a silicon diaphragm (104) and a silicon substrate (108) arranged in parallel and separated by a glass dielectric spacer (112). The glass is deposited onto a surface of the substrate using an ion milling machine. The sensor further includes a transition piece (116) attached to a second layer of glass insulator (120) disposed between the silicon diaphragm and the transition piece. The transition piece has a throughbore (124) formed therein for applying a fluid to a surface of the silicon diaphragm, the fluid having a pressure desired to be measured by the sensor. The glass disposed between the diaphragm and the transition piece is deposited onto the transition piece using the ion milling process.</p>
申请公布号 WO1995016193(A2) 申请公布日期 1995.06.15
申请号 US1994012826 申请日期 1994.12.01
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