PLASMA CVD APPARATUS AND METHOD

摘要

A plasma CVD apparatus and method by which a high quality thin film having an excellent uniformity of film thickness can be formed on a larger substrate. The plasma CVD apparatus comprises a linear or halfway-turned-down induction coupling electrode disposed in a reaction vessel, characterized in that: a high-frequency power supply section and a ground section are provided, respectively, at the opposite end parts of the induction coupling electrode; high frequency power is supplied such that a standing wave of half-wave length or integral multiples thereof is established between the power supply section and the ground section or between the power supply section and the ground section, and the turned down section; diameter of the induction coupling electrode is varied, or set at 10 mm or less at least partially between the power supply section and the ground section, or the electrode is coated with a dielectric.