发明名称 SPUTTERING TARGET MATERIAL FOR FORMATION OF PROTECTIVE FILM FOR PHASE-TRANSITION TYPE OPTICAL RECORDING MEDIUM, AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To obtain a sputtering target capable of stably forming a high quality ZnS- SiO2 type protective film with high efficiency by providing a composition consisting of ZnS and SiO and also regulating the content ratio of zinc oxide, Zn(OH)2 , and ZnCO3 to ZnS. SOLUTION: A ZnS powder and an SiO2 powder are mixed at a mole ratio of about 4:1, and the resultant powder mixture is compacted and then burnt in vacuum, and the resultant burnt part is ground into prescribed dimensions in the air atmosphere of <=60% relative humidity or in the atmosphere of nitrogen, argon gas, etc. By this procedure, the content ratio of ZnO2-x (where 0<=x<2), Zn(OH)2 , and ZnCO3 to ZnS is regulated so that, when evaluated by the compound peak integrated intensity by ESCA, the integrated intensity ratio of [ZnO2-x +Zn(OH)2 +ZnCO3 ]/ZnS is regulated to <=1, and also the depth where the integrated intensity ratio takes a value of 1 is limited to the range of $30 &mu;m from the surface, and further, C content is regulated to <=7 atomic %. By this method, the target material, capable of forming a protective film with superior reproducibility can be obtained in a short presputter time at high sputter rate.
申请公布号 JPH1121664(A) 申请公布日期 1999.01.26
申请号 JP19970187266 申请日期 1997.06.30
申请人 DOWA MINING CO LTD 发明人 KUNO SEIICHI;TEZUKA KAZUMASA;NAGATA CHOJU;ISHIKAWA YUICHI;SENOO KAZUHIRO
分类号 C04B35/547;C23C14/34 主分类号 C04B35/547
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