| 摘要 |
<p>PURPOSE:To enable a resistance value in a low voltage region to be maintained also in a high voltage region, by providing an electrode for controlling resistance values on one side of a polycrystalline silicon resistor with an insulation film interposed therebetween so as to provide a potential difference between the electrode and the polycrystalline silicon resistor. CONSTITUTION:A polycrystalline silicon coat film 2 deposited on an insulation substrate 1 is worked into a linear shape and covered totally with an insulation film 3. Contact holes 4 are formed in the insulation film 3 near the opposite sides of the polycrystalline silicon coat film 2. Resistance terminal electrodes 5 are formed by vapor deposition or the like over the contact holes 4 while, simultaneously therewith, a resistance value controlling elec trode 6 is formed on the polycrystalline silicon coat film 2. Thus, by difference between potentials applied to the electrode 6 and to the polycrystalline silicon resistor under the electrode, electrical charge is induced, according to the polarity of the potential, in the polycrystalline silicon resistor layer near the interface between the insulation film and the polycrystalline silicon resistor layer directly under the electrode 6, so that the apparent cross section of the polycrystalline silicon resistor relating to the electrical characteristics thereof is reduced. Thereby, the resistance value of the resistor in a high voltage region will not be decreased. In this manner, it is possible to obtain a polycrystalline silicon resistance element having resistance values little dependent on voltage.</p> |
