发明名称 EXPOSURE MASK AND METHOD AND DEVICE FOR EVALUATING ITS PATTERN
摘要 PROBLEM TO BE SOLVED: To perform highly accurate evaluation with G excellent reproducibility by preventing a foreign matter from being stuck on a pattern surface when inspecting the defect of a pattern formed on an exposure mask. SOLUTION: The pattern of the exposure mask 10 where the pattern of light shielding film 12 constituted of chromium is formed on a transparent substrate 11 constituted of quartz is optically measured and evaluated. Then, an electrically conductive thin film layer 13 which is transparent to light for measuring the pattern is provided on the full surfaces of the transparent substrate 11 and the light shielding film 12, and the thin film layer 13 is grounded so as to perform measurement and evaluation.
申请公布号 JPH1152551(A) 申请公布日期 1999.02.26
申请号 JP19970202998 申请日期 1997.07.29
申请人 TOSHIBA CORP 发明人 YOSHITAKE HIDESUKE
分类号 G01N21/88;G01N21/94;G01N21/956;G03F1/40;G03F1/84;H01L21/027 主分类号 G01N21/88
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