| 摘要 |
<p>PURPOSE:To decrease the chipping of the surfaces of scribing areas, by forming the surfaces of the scribing areas of a compound semiconductor wafer so that the densities of impurities in the areas are higher than that of the other region of the compound semiconductor. CONSTITUTION:An alloy layer, whose impurity density is higher than that of a region other than scribing areas, is formed on the surface of each scribing area 3 of a compound semiconductor wafer 1. Thereafter, the scribing areas 3 undergo dicing. Since the cleavage property of the GaAs crystal in the surface of the scribing area 3 can be made less, the chipping of the surface of the scribing area 3 can be decreased. Since the reduction in chipping can reduce the chipping reaching the active area of a semiconductor integrated circuit 2, the yield rate of the semiconductor integrated circuit device in dicing can be improved.</p> |
