| 摘要 |
<p>A memory in an integrated circuit contains a current sense amplifier. The current sense amplifier contains a first and second input transistor with cross-coupled gates and drains, each transistor having a source coupled to a respective memory bit line. The current from the drains of the first and second input transistor is guided to source-drain channels of the first and second load transistor respectively. The drains of the first and second input transistor are coupled to a common node via source-gate links of the first and second load transistor respectively. The gate/source voltage drops of the first and second load transistor are arranged in a direction opposite to a direction of gate/source voltage drops of the first and second input transistor between the complementary bit lines and the common node.</p> |
