发明名称 HIGH BREAKDOWN VOLTAGE POWER INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To enhance the operation reliability of a high breakdown voltage power integrated circuit that incorporates a totem pole circuit composed of a high breakdown voltage n-channel MOS device. SOLUTION: An OFF control circuit 6 is added to a conventional high breakdown voltage power integrated circuit consisting of a totem pole circuit 1, an upper arm side drive circuit 2, a lower arm side drive circuit 3, a MOSFET 4 and a level shifter circuit 5. The OFF control circuit 6 is activated by switching on a MOSFET1b as a lower arm side device of the totem pole circuit 1 to prevent malfunctioned ON of a MOSFET1a as an upper arm side device of the totem pole circuit 1.
申请公布号 JP2000183709(A) 申请公布日期 2000.06.30
申请号 JP19980355492 申请日期 1998.12.15
申请人 FUJI ELECTRIC CO LTD 发明人 SUMIDA HITOSHI
分类号 H03K17/16;H03K17/687;H03K19/0185;(IPC1-7):H03K17/16;H03K19/018 主分类号 H03K17/16
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