| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve heat-radiating performance of a high output power semiconductor device and to attempt simplification of an assembling step. SOLUTION: A semiconductor element (FET) 1 and matching circuit substrates 4 and 5 at the input side and the output side are mounted on a package base unit 2. The semiconductor 1 is so provided with a gold plated film as to cover a heat-generating region and is connected with a drain electrode. The gold plated film is connected directly with a strip line 6 provided on the output side, matching the circuit substrate 4. Electrical junction between the drain electrode and the strip line 6 on the output side matching circuit substrate 4 via the gold plated film are made, heat generated at the semiconductor element 1 is conducted to the strip line 6 on the output side matching circuit substrate 4, via the gold plating film and is also conducted to the package base unit 2 via the output side matching circuit substrate 4. In addition to heat-radiation through heat conduction from the rear surface of the semiconductor element 1 to the package base unit 2, heat-radiating effect of the semiconductor element 1 is enhanced.</p> |
