| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a film that can sufficiently eliminate small bumps that occur on a Ti tin film formed by PVD and thus can prevent the influence on device characteristics. SOLUTION: A system 1 or forming the film comprises a chamber 10 for forming the Ti thin film on a semiconductor wafer W by PVD and heat-treating the Ti thin film, and chambers 20, 30 for successively forming a barrier layer and a metal wiring layer on the heat-treated Ti thin film. In a method for forming the film according to the present invention, after the semiconductor wafer W has been placed on a susceptor 15 of the chamber 10 and the Ti thin film has been formed, the wafer is heated at prescribed temperature and in a prescribed time by a heater 2. Thus, the small bumps that can occur on the Ti thin film can be sufficiently eliminated, and the Ti thin film can be planarized and uniformized. As a result, occurrence of bending in the metal wiring layer formed on the Ti thin film can be prevented.
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