| 摘要 |
PURPOSE: A method for manufacturing a tungsten plug is provided to be capable of performing easily contact processing by forming a protrusive tungsten plug using etching selectivity between a lower insulating layer and a tungsten film. CONSTITUTION: A lower insulating layer(2) is formed on a semiconductor substrate. A contact hole is formed by selectively etching the lower insulating layer(2). A glue layer(4) and a tungsten film are sequentially formed on the resultant structure including the contact hole. By blanket etching of the tungsten film and the glue layer(4), the lower insulating layer is exposed. A protrusive tungsten plug(6') is formed by etching the exposed lower insulating layer using the difference of etching selectivity between the tungsten film and the lower insulating layer.
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