| 摘要 |
Avalanche amplification structures (1) including electrodes (2) and (8), an avalanche region (3), a quantifier (4), an integrator (5), a governor (6), a nd a substrate (7) arranged to detect a weak signal composed of as few as sever al electrons are presented. Quantifier (4) regulates the avalanche process. Integrator (5) accumulates a signal charge. Governor (6) drains the integrat or (5) and controls the quantifier (4). Avalanche amplifying structures (1) include: normal quantifier, reverse bias designs; normal quantifier, normal bias designs; lateral quantifier, normal bias designs; changeable quantifier , normal bias, adjusting electrode designs; normal quantifier, normal bias, adjusting electrode designs; and lateral quantifier, normal bias, annular integrator designs. Avalanche amplification structures (1) are likewise arranged to provide arrays of multi-channel devices. Structures have immediately applicability to devices critical to homeland defense.
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