发明名称 Film bulk acoustic resonator (FBAR) process using single-step resonator layer deposition
摘要 A process comprising, in a vacuum, depositing a bottom electrode layer and a piezoelectric layer over a cavity in a substrate, the cavity being filled with a sacrificial material, patterning and etching the piezoelectric layer and the bottom electrode layer to expose one or more edges of the bottom electrode layer and the piezoelectric layer, treating some or all of the one or more edges to prevent electrical contact between the bottom electrode layer and a top electrode layer, and depositing and etching the top electrode layer. An apparatus comprising a resonator attached to a substrate and suspended over a cavity in the substrate, the resonator comprising a bottom electrode layer and a piezoelectric layer on the bottom electrode layer, both the bottom electrode layer and the piezoelectric layer having been deposited in a vacuum, and a top electrode layer on the piezoelectric layer, wherein one or more edges of the bottom electrode layer and the piezoelectric layer include features that prevent electrical contact between the bottom electrode layer and the top electrode layer.
申请公布号 US7299529(B2) 申请公布日期 2007.11.27
申请号 US20050154854 申请日期 2005.06.16
申请人 INTEL CORPORATION 发明人 GINSBURG EYAL;ETGAR-DIAMANT DORA;WANG LI-PENG
分类号 H04R17/00;H03H9/00 主分类号 H04R17/00
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