SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To produce highly reliable semiconductor device by providing a transistor using an oxide semiconductor film for a channel with stable electric characteristics.SOLUTION: The semiconductor device is manufactured by laminating and forming an oxide semiconductor film that may be a first crystal structure by a heating treatment and an oxide semiconductor film that may be a second crystal structure by a heating treatment, and by applying a heating treatment, the oxide semiconductor film having the second crystal structure as a seed grows into the oxide semiconductor film having the first crystal structure. The oxide semiconductor film formed in such a manner is used for an active layer of a transistor.SELECTED DRAWING: Figure 13