| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which can measure a side etching amount of a concavity or a through hole which is formed on a silicon substrate.SOLUTION: A semiconductor element comprises scale members 15b, 15c which are arranged via an insulation film 11, on a silicon substrate 1 including a cavity 3 formed by a concavity. The scale members 15b, 15c are arranged on ends of the cavity 3. Ends of the scale members 15b, 15c are located closer to a central part of the cavity 3 than lateral faces of the cavity 3. The cavity 3 is formed by crystal anisotropic etching of silicon. The semiconductor element further comprises resistor bodies 5 each arranged on the cavity 3 in a bridging manner.SELECTED DRAWING: Figure 1 |
