| 主权项 |
1. A semiconductor device comprising:
a first semiconductor electronic component that includes a pad electrode, a passivation layer in which the pad electrode is embedded and with an opening in which the pad electrode is exposed, a solder bump, and a metal layer between the pad electrode and the solder bump, the metal layer comprising (a) an underlying metal layer including a first layer and a second layer between the pad electrode and the solder bump, the underlying metal layer being connected to the pad electrode, and (b) a main metal layer on the underlying metal layer, wherein,
the metal layer overlies a major surfaced of the passivation layer,a portion of the passivation layer overlies an edge of the pad electrode,the main metal layer has an eave portion at an outer edge portion thereof, the eave portion projecting from a side of the main metal layer and projecting parallel both to a major surface of the pad electrode and the major surface of the passivation layer,the eave portion is thinner than a central portion of the main metal layer that overlaps the pad electrode,an edge portion of the eave portion projects in a first direction beyond an edge of the first layer and an edge of the second layer such that the edge portion of the eave portion is free from contact with the first layer and the second layer,the edge portion of the eave portion projects in the first direction beyond the edge of the first layer and the edge of the second layer such that a gap exists between the edge portion of the eave portion and the passivation layer, andthe solder bump is in contact with the edge portion of the eave portion. |
