Plasma processing apparatus

摘要

Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

主权项

1. A method for performing plasma processing on a wafer, the wafer being attached on an upper surface of an adhesive sheet held by a holder frame supporting a periphery of the adhesive sheet,
the method comprising steps of: mounting the wafer attached to the adhesive sheet on a stage disposed in a vacuum chamber; covering the holder frame with a cover member; and supplying gas to the vacuum chamber and generating plasma in the vacuum chamber, wherein: the cover member touches neither the wafer nor the adhesive sheet while performing the plasma processing, an upper surface of the stage includes a first region and a second region surrounding the first region, a material of a surface of the first region being different from a material of a surface of the second region, the wafer is mounted within the first region and the holder frame is mounted on the second region, and the cover member covers a portion of the adhesive sheet over second region and the first region.