Structures and methods for stack type semiconductor packaging

摘要

Methods and structures for stack type semiconductor packaging are disclosed. In one embodiment, a semiconductor device includes a semiconductor chip mounted onto a substrate, a first resin molding portion formed on the substrate for sealing the semiconductor chip, and a through metal mounted on the substrate so as to pierce the first resin molding portion around the semiconductor chip. The semiconductor device further comprises an upper metal electrically coupled with the through metal and mounted on the first resin molding portion to extend from the through metal toward the semiconductor chip along an upper surface of the first resin molding portion, where the through metal and the upper metal are formed into an integral structure.

主权项

1. A semiconductor device, comprising:
a semiconductor chip mounted onto a substrate; a first resin molding portion formed on the substrate for sealing the semiconductor chip, the first resin molding portion comprising a plurality of notches and a corresponding plurality of through holes, the plurality of notches extending horizontally and substantially parallel to the surface of the substrate; a plurality of through metals mounted on respective through holes of the plurality of through holes, wherein a plurality of upper surfaces of the plurality of through metals is coplanar with an upper surface of the first resin molding portion; and a first plurality of upper metals electrically coupled with respective through metals of the plurality of through metals, the first plurality of upper metals comprising a first upper metal extending over a first portion of the semiconductor chip and a second upper metal extending over a second portion of the semiconductor chip, the first and second upper metals separated by a stepped portion of the first resin molding portion, wherein a plurality of upper surfaces of the first plurality of upper metals is coplanar with the plurality of upper surfaces of the plurality of through metals.